advanced power n-channel enhancement mode electronics corp. power mosfet fast switching performance bv dss 30v simple drive requirement r ds(on) 12m full isolation package i d 45a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice drain current 3 , v gs @ 10v 201409031 halogen-free product 1 45 drain-source voltage 30 gate-source voltage + 20 drain current 3 , v gs @ 10v parameter rating AP60T03GI-HF 32 pulsed drain current 1 120 total power dissipation 37.5 thermal data parameter storage temperature range -55 to 175 operating junction temperature range -55 to 175 g d s g d s to-220cfm(i) a p60t03 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-220cfm package is widely preferred for all commercial-industrial through hole applications. the mold compound provides a high isolation voltage capability and lo w thermal resistance between the tab and the external heat-sink. .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =20a - - 12 m v gs =4.5v, i d =15a - - 25 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance 2 v ds =10v, i d =10a - 25 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 12 20 nc q gs gate-source charge v ds =20v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 7 - nc t d(on) turn-on delay time v ds =15v - 9 - ns t r rise time i d =20a - 58 - ns t d(off) turn-off delay time r g =3.3 -18- ns t f fall time v gs =10v - 6 - ns c iss input capacitance v gs =0v - 1135 1820 pf c oss output capacitance v ds =25v - 200 - pf c rss reverse transfer capacitance f=1.0mhz - 135 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.3 v t rr reverse recovery time i s =20a, v gs =0v, - 24 - ns q rr reverse recovery charge di/dt=100a/s - 16 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 3.ensure that the junction temperature does not exceed t jmax. . AP60T03GI-HF .
a p60t03gi-h f fig 1. typical output characteristics fig 2. typical output characteristics 0.31 t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 10 30 50 70 90 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =15a t c =25 o c 0 20 40 60 80 100 120 01234 v ds , drain-to-source voltage (v) i d , drain current (a) v g =4.0v t c =25 o c 10v 8.0v 6.0v 5.0v 0 20 40 60 80 100 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c v g =4.0v 10v 8.0v 6.0v 5.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =20a 0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 0.6 1 1.4 1.8 2.2 2.6 -50 0 50 100 150 200 t j ,junction temperature ( o c) v gs(th) (v) .
ap60t03gi-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics 0.31 t rr q rr fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c rss c oss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) 0 2 4 6 8 10 0 4 8 12162024 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =10v v ds =15v v ds =20v i d =20a .
AP60T03GI-HF marking information 5 part numbe r package code date code (ywwsss) y last digit of the year ww week sss sequence meet rohs requirement for low voltage mosfet only 60t03gi ywwsss .
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